NDD02N60ZT4G ON Semiconductor, NDD02N60ZT4G Datasheet - Page 6
![MOSFET N-CH 600V DPAK](/photos/5/51/55181/488-d-pak_sml.jpg)
NDD02N60ZT4G
Manufacturer Part Number
NDD02N60ZT4G
Description
MOSFET N-CH 600V DPAK
Manufacturer
ON Semiconductor
Datasheet
1.NDF02N60ZG.pdf
(10 pages)
Specifications of NDD02N60ZT4G
Package / Case
DPak, DPak-3, SOT-223, TO-220, TO-220AB, TO-225AA, TO-92
Mounting Type
Surface Mount
Power - Max
57W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
10.1nC @ 10V
Vgs(th) (max) @ Id
4.5V @ 50µA
Current - Continuous Drain (id) @ 25° C
2.2A
Drain To Source Voltage (vdss)
600V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.8 Ohm @ 1A, 10V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4 Ohms
Forward Transconductance Gfs (max / Min)
1.7 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
1.4 A
Power Dissipation
57 W
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Gate Charge Qg
10.1 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NDD02N60ZT4G
Manufacturer:
ON
Quantity:
2 500
Company:
Part Number:
NDD02N60ZT4G
Manufacturer:
ON Semiconductor
Quantity:
1 900
Company:
Part Number:
NDD02N60ZT4G
Manufacturer:
ON
Quantity:
12 500
Part Number:
NDD02N60ZT4G
Manufacturer:
ON/安森美
Quantity:
20 000
0.01
0.1
10
1E−06
1
50% (DUTY CYCLE)
20%
10%
5%
2%
1%
SINGLE PULSE
1E−05
Figure 16. Thermal Impedance (Junction−to−Case) for NDF02N60Z
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
1E−04
1E−03
Figure 17. Isolation Test Diagram
http://onsemi.com
1E−02
PULSE TIME (s)
6
1E−01
HEATSINK
0.110″ MIN
LEADS
1E+00
1E+01
R
Steady State
qJC
1E+02
= 5.2°C/W
1E+03