NDD02N60ZT4G ON Semiconductor, NDD02N60ZT4G Datasheet - Page 6

• Manufacturer Part Number: NDD02N60ZT4G
• Description: MOSFET N-CH 600V DPAK
• Manufacturer: ON Semiconductor

Specifications of NDD02N60ZT4G

• Package / Case: DPak, DPak-3, SOT-223, TO-220, TO-220AB, TO-225AA, TO-92
• Mounting Type: Surface Mount
• Power - Max: 57W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 10.1nC @ 10V
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Drain To Source Voltage (vdss): 600V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.8 Ohm @ 1A, 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 Ohms
• Forward Transconductance Gfs (max / Min): 1.7 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 1.4 A
• Power Dissipation: 57 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 10.1 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
0.1
10
1E−06
1
50% (DUTY CYCLE)
20%
10%
5%
2%
1%
SINGLE PULSE
1E−05
Figure 16. Thermal Impedance (Junction−to−Case) for NDF02N60Z
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
1E−04
1E−03
Figure 17. Isolation Test Diagram
http://onsemi.com
1E−02
PULSE TIME (s)
6
1E−01
HEATSINK
0.110″ MIN
LEADS
1E+00
1E+01
R
Steady State
qJC
1E+02
= 5.2°C/W
1E+03