NDD02N60ZT4G ON Semiconductor, NDD02N60ZT4G Datasheet - Page 5

• Manufacturer Part Number: NDD02N60ZT4G
• Description: MOSFET N-CH 600V DPAK
• Manufacturer: ON Semiconductor

Specifications of NDD02N60ZT4G

• Package / Case: DPak, DPak-3, SOT-223, TO-220, TO-220AB, TO-225AA, TO-92
• Mounting Type: Surface Mount
• Power - Max: 57W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 10.1nC @ 10V
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Drain To Source Voltage (vdss): 600V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.8 Ohm @ 1A, 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 Ohms
• Forward Transconductance Gfs (max / Min): 1.7 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 1.4 A
• Power Dissipation: 57 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 10.1 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
100
0.1
0.01
100
10
0.01
0.1
0.1
10
1
1E−06
1E−06
10
1
0.1
1
Figure 12. Maximum Rated Forward Biased
50% (DUTY CYCLE)
5.0%
2.0%
1.0%
20%
10%
V
SINGLE PULSE
T
50% (DUTY CYCLE)
20%
10%
5%
2%
C
GS
1%
SINGLE PULSE
= 25°C
V
v 30 V
SINGLE PULSE
Safe Operating Area NDD02N60Z
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1E−05
1E−05
1
Figure 15. Thermal Impedance (Junction−to−Ambient) for NDD02N60Z
Figure 14. Thermal Impedance (Junction−to−Case) for NDD02N60Z
1E−04
1E−04
10
10 ms
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
dc
1 ms
100 ms
LIMIT
1E−03
1E−03
TYPICAL CHARACTERISTICS
100
10 ms
http://onsemi.com
1E−02
1E−02
PULSE TIME (s)
PULSE TIME (s)
1000
5
0.01
100
0.1
10
1E−01
1E−01
1
0.1
Figure 13. Maximum Rated Forward Biased
V
SINGLE PULSE
T
GS
C
= 25°C
V
v 30 V
Safe Operating Area NDF02N60Z
DS
1E+00
1E+00
, DRAIN−TO−SOURCE VOLTAGE (V)
1
1E+01
1E+01
dc
10
10 ms
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
1 ms
R
Steady State
R
Steady State
LIMIT
qJC
qJA
100 ms
1E+02
1E+02
= 2.2°C/W
= 41°C/W
100
10 ms
1E+03
1E+03
1000