NDD02N60ZT4G ON Semiconductor, NDD02N60ZT4G Datasheet - Page 9
![MOSFET N-CH 600V DPAK](/photos/5/51/55181/488-d-pak_sml.jpg)
NDD02N60ZT4G
Manufacturer Part Number
NDD02N60ZT4G
Description
MOSFET N-CH 600V DPAK
Manufacturer
ON Semiconductor
Datasheet
1.NDF02N60ZG.pdf
(10 pages)
Specifications of NDD02N60ZT4G
Package / Case
DPak, DPak-3, SOT-223, TO-220, TO-220AB, TO-225AA, TO-92
Mounting Type
Surface Mount
Power - Max
57W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
10.1nC @ 10V
Vgs(th) (max) @ Id
4.5V @ 50µA
Current - Continuous Drain (id) @ 25° C
2.2A
Drain To Source Voltage (vdss)
600V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.8 Ohm @ 1A, 10V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4 Ohms
Forward Transconductance Gfs (max / Min)
1.7 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
1.4 A
Power Dissipation
57 W
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Gate Charge Qg
10.1 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NDD02N60ZT4G
Manufacturer:
ON
Quantity:
2 500
Company:
Part Number:
NDD02N60ZT4G
Manufacturer:
ON Semiconductor
Quantity:
1 900
Company:
Part Number:
NDD02N60ZT4G
Manufacturer:
ON
Quantity:
12 500
Part Number:
NDD02N60ZT4G
Manufacturer:
ON/安森美
Quantity:
20 000
V
S
SEATING
PLANE
−T−
F
V
S
F
1
B
R
4
2
1
G
3
B
R
4
2
L
3
A
D
H
A
K
2 PL
D
0.13 (0.005)
0.13 (0.005)
3 PL
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
J
J
M
M
C
0.228
5.80
T
T
−T−
C
PACKAGE DIMENSIONS
E
SEATING
PLANE
SOLDERING FOOTPRINT*
U
E
H
http://onsemi.com
0.244
6.20
CASE 369AA−01
CASE 369D−01
ISSUE B
ISSUE A
DPAK
IPAK
9
0.101
2.58
0.118
3.0
0.063
1.6
SCALE 3:1
Z
Z
6.172
0.243
NOTES:
1. DIMENSIONING AND TOLERANCING PER
2. CONTROLLING DIMENSION: INCH.
inches
mm
ANSI Y14.5M, 1982.
STYLE 2:
DIM
PIN 1. GATE
A
B
C
D
E
G
H
K
R
S
V
F
J
Z
NOTES:
1. DIMENSIONING AND TOLERANCING
2. CONTROLLING DIMENSION: INCH.
2. DRAIN
3. SOURCE
4. DRAIN
0.235
0.250
0.086
0.027
0.018
0.037
0.034
0.018
0.350
0.180
0.025
0.035
0.155
PER ANSI Y14.5M, 1982.
MIN
DIM
0.090 BSC
STYLE 2:
A
B
C
D
H
R
U
E
F
J
L
S
V
Z
INCHES
PIN 1. GATE
0.235
0.250
0.086
0.025
0.018
0.030
0.386
0.018
0.180
0.024
0.020
0.035
0.155
2. DRAIN
3. SOURCE
4. DRAIN
0.245
0.265
0.094
0.035
0.023
0.045
0.040
0.023
0.380
0.215
0.040
0.050
MIN
MAX
0.090 BSC
−−−
INCHES
0.245
0.265
0.094
0.035
0.024
0.045
0.410
0.023
0.215
0.040
0.050
MILLIMETERS
MAX
5.97
6.35
2.19
0.69
0.46
0.94
0.87
0.46
8.89
4.45
0.63
0.89
3.93
−−−
−−−
MIN
2.29 BSC
MILLIMETERS
5.97
6.35
2.19
0.63
0.46
0.77
9.80
0.46
4.57
0.60
0.51
0.89
3.93
MAX
MIN
6.35
6.73
2.38
0.88
0.58
1.14
1.01
0.58
9.65
5.45
1.01
1.27
−−−
2.29 BSC
10.40
MAX
6.22
6.73
2.38
0.89
0.61
1.14
0.58
5.45
1.01
1.27
−−−
−−−