IPD30N06S2-23 Infineon Technologies, IPD30N06S2-23 Datasheet - Page 5

• Manufacturer Part Number: IPD30N06S2-23
• Description: MOSFET N-CH 55V 30A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD30N06S2-23

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 23 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 50µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 901pF @ 25V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 23 m Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 100 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000252166

Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
60
50
40
30
20
10
120
100
0
80
60
40
20
0
2
DS
GS
0
); T
); V
GS
j
j
DS
= 25 °C
1
3
= 6V
10 V
2
-55 °C
4
V
25 °C
3
V
GS
DS
[V]
6.5 V
6 V
5.5 V
5 V
[V]
175 °C
7 V
4
5
5
6
6
page 5
7
7
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. Forward transconductance
g
parameter: g
fs
DS(on)
= f(I
50
40
30
20
10
40
35
30
25
20
15
0
= (I
D
0
0
); T
D
); T
j
= 25°C
fs
GS
10
10
j
= 25 °C
5.5 V
20
20
I
I
D
D
30
30
[A]
[A]
IPD30N06S2-23
6 V
40
40
50
50
2006-07-18
7 V
6.5 V
10 V
60
60