IPD30N06S2-23 Infineon Technologies, IPD30N06S2-23 Datasheet - Page 7

• Manufacturer Part Number: IPD30N06S2-23
• Description: MOSFET N-CH 55V 30A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD30N06S2-23

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 23 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 50µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 901pF @ 25V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 23 m Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 100 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000252166

Rev. 1.0
13 Typical avalanche energy
E
parameter: I
15 Typ. drain-source breakdown voltage
V
AS
BR(DSS)
700
600
500
400
300
200
100
= f(T
0
66
64
62
60
58
56
54
52
50
25
-60
= f(T
j
)
30 A
D
15 A
7.5 A
j
); I
50
-20
D
= 1 mA
75
20
T
T
100
j
j
60
[°C]
[°C]
125
100
140
150
180
175
page 7
14 Typ. gate charge
V
16 Gate charge waveforms
GS
V
V
= f(Q
GS
GS
10
8
6
4
2
0
0
gate
Q
Q
gs
gs
); I
D
5
= 30 A pulsed
Q
Q
g
g
10
Q
Q
Q
gate
gd
gd
[nC]
15
IPD30N06S2-23
11 V
Q
Q
gate
gate
20
44 V
2006-07-18
25