IPD22N08S2L-50 Infineon Technologies, IPD22N08S2L-50 Datasheet - Page 2

• Manufacturer Part Number: IPD22N08S2L-50
• Description: MOSFET N-CH 75V 27A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD22N08S2L-50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 2V @ 31µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 630pF @ 25V
• Power - Max: 75W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 50 m Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 22 A
• Power Dissipation: 75 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000252163

Rev. 1.0
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Drain-source on-state resistance
1)
j
=25 °C, unless otherwise specified
Symbol
R
R
R
V
V
I
I
R
R
DSS
GSS
DS(on)
(BR)DSS
GS(th)
thJC
thJA
thJA
DS(on)
minimal footprint
6 cm
V
V
V
T
V
T
V
V
V
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=125 °C
page 2
=V
=75 V, V
=75 V, V
=0 V, I
=20 V, V
=5 V, I
=10 V, I
2
Conditions
cooling area
GS
, I
2)
D
D
D
= 1 mA
=50 A
D
=31 µA
GS
GS
DS
=50 A,
=0 V,
=0 V,
=0 V
2)
min.
1.2
75
-
-
-
-
-
-
-
-
-
Values
0.01
58.0
38.5
typ.
1.6
1
1
-
-
-
-
-
IPD22N08S2L-50
max.
50.0
100
100
100
2.0
75
50
65
2
1
-
2006-07-18
Unit
K/W
V
µA
nA
m
mΩ