IPD22N08S2L-50 Infineon Technologies, IPD22N08S2L-50 Datasheet - Page 7

• Manufacturer Part Number: IPD22N08S2L-50
• Description: MOSFET N-CH 75V 27A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD22N08S2L-50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 2V @ 31µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 630pF @ 25V
• Power - Max: 75W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 50 m Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 22 A
• Power Dissipation: 75 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000252163

Rev. 1.0
13 Typical avalanche energy
E
parameter: I
15 Typ. drain-source breakdown voltage
V
AS
BR(DSS)
= f(T
400
350
300
250
200
150
100
50
90
85
80
75
70
65
0
-60
25
= f(T
j
)
5.5 A
11 A
22 A
D
j
); I
-20
D
= 1 mA
75
20
T
T
j
j
60
[°C]
[°C]
100
125
140
180
175
page 7
14 Typ. gate charge
V
16 Gate charge waveforms
GS
V
V
= f(Q
GS
GS
12
10
8
6
4
2
0
0
gate
Q
Q
gs
gs
); I
D
= 22 A pulsed
Q
Q
10
g
g
Q
Q
Q
gate
gd
gd
[nC]
15 V
IPD22N08S2L-50
20
60 V
Q
Q
gate
gate
2006-07-18
30