IPD22N08S2L-50 Infineon Technologies, IPD22N08S2L-50 Datasheet - Page 6

• Manufacturer Part Number: IPD22N08S2L-50
• Description: MOSFET N-CH 75V 27A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD22N08S2L-50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 2V @ 31µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 630pF @ 25V
• Power - Max: 75W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 50 m Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 22 A
• Power Dissipation: 75 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000252163

Rev. 1.0
9 Typ. Drain-source on-state resistance
R
parameter: I
11 Typ. capacitances
C = f(V
DS(ON)
10
10
10
90
80
70
60
50
40
30
20
DS
4
3
2
= f(T
-60
0
); V
D
j
)
GS
= 11 A; V
-20
= 0 V; f = 1 MHz
5
20
10
GS
= 10 V
V
T
DS
j
60
15
[°C]
[V]
100
20
140
25
Crss
Coss
Ciss
180
30
page 6
10 Typ. gate threshold voltage
V
parameter: I
12 Typical forward diode characteristicis
IF = f(V
parameter: T
GS(th)
2.5
1.5
0.5
10
10
10
10
= f(T
2
1
0
3
2
1
0
SD
-60
0
)
j
); V
D
j
0.2
-20
GS
0.4
= V
20
175 °C
DS
0.6
31 µA
V
T
25 °C
SD
j
0.8
60
[°C]
[V]
155 µA
IPD22N08S2L-50
1
100
1.2
140
2006-07-18
1.4
180
1.6