2SJ598-Z-E1-AY Renesas Electronics America, 2SJ598-Z-E1-AY Datasheet - Page 9

• Manufacturer Part Number: 2SJ598-Z-E1-AY
• Description: MOSFET P-CH 60V TO-252
• Manufacturer: Renesas Electronics America

Specifications of 2SJ598-Z-E1-AY

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 720pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
1.1 ±0.2
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Source
Drain
1
6.5 ±0.2
5.0 ±0.2
2.3
2
2.3
Body
Diode
4
3
2.3 ±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
0.5 ±0.1
Data Sheet D14656EJ5V0DS
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2) TO-252 (MP-3Z)
Note The depth of notch at the top of the fin is
2.3 ±0.3
from 0 to 0.2 mm.
6.5 ±0.2
5.0 ±0.2
4.4 ±0.2
1 2 3
4
2.3 ±0.3
Note
0.5 ±0.1
2.3 ±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
0.15 ±0.15
0.5 ±0.1
0.5 ±0.1
Note
2SJ598
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