2SJ598-Z-E2-AY Renesas Electronics America, 2SJ598-Z-E2-AY Datasheet

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2SJ598-Z-E2-AY

Manufacturer Part Number
2SJ598-Z-E2-AY
Description
MOSFET P-CH 60V TO-252
Manufacturer
Renesas Electronics America
Datasheet

Specifications of 2SJ598-Z-E2-AY

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
130 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
720pF @ 10V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
To our customers,
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Renesas Electronics website: http://www.renesas.com
Old Company Name in Catalogs and Other Documents
April 1
Renesas Electronics Corporation
st
, 2010

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2SJ598-Z-E2-AY Summary of contents

Page 1

To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...

Page 2

All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...

Page 3

... DESCRIPTION The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance 130 mΩ MAX. (V DS(on 190 mΩ MAX. (V DS(on)2 • Low 720 pF TYP. iss iss • Built-in gate protection diode • TO-251/TO-252 package ...

Page 4

... – F(S- μ Q di/dt = 100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG (− τ τ μ Duty Cycle ≤ 1% Data Sheet D14656EJ5V0DS 2SJ598 MIN. TYP. MAX. UNIT μ –10 A μ –1.5 –2.0 –2 102 130 mΩ 131 190 mΩ 720 pF 150 0.98 ...

Page 5

... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 140 160 Case Temperature - C –100 Single Pulse 10 m 100 Pulse Width - s Data Sheet D14656EJ5V0DS 2SJ598 60 80 100 120 140 160 ˚ 125˚C/W th(ch- 5.43˚C/W th(ch-C) 100 1000 3 ...

Page 6

... Pulsed 0 0 –5 –100 V - Gate to Source Voltage - V GS GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE –4.0 Pulsed –3.0 –2.0 –1.0 0 –100 – Channel Temperature - ch Data Sheet D14656EJ5V0DS 2SJ598 = –10 V –4.0 V Pulsed –4 –6 –8 –10 Pulsed I = – –10 –15 – – – 100 150 ˚ ...

Page 7

... I - Drain Current - A D DYNAMIC INPUT/OUTPUT CHARACTERISTICS –60 μ – – –30 V –40 –12 V –30 –20 – 100 Gate Charge - nC G Data Sheet D14656EJ5V0DS 2SJ598 0 V –1.5 –1 – Ω – –10 –100 – – –10 GS –8 –6 –4 – ...

Page 8

... A AS –10 – – Ω –20 → –0.1 10 μ 100 μ Inductive Load - H 6 SINGLE AVALANCHE ENERGY DERATING FACTOR 160 140 120 100 100 Starting T - Starting Channel Temperature - ch Data Sheet D14656EJ5V0DS 2SJ598 V = – Ω –20 → ≤ – 125 150 ˚C ...

Page 9

... TO-252 (MP-3Z) 6.5 ±0.2 5.0 ±0.2 4.4 ±0 2.3 ±0.3 Note The depth of notch at the top of the fin is from 0 to 0.2 mm. Data Sheet D14656EJ5V0DS 2SJ598 2.3 ±0.2 0.5 ±0.1 Note Note 0.5 ±0.1 0.5 ±0.1 2.3 ±0.3 0.15 ±0.15 1. Gate 2. Drain 3 ...

Page 10

... NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SJ598 M8E 02. 11-1 ...

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