BSO303SP H Infineon Technologies, BSO303SP H Datasheet

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BSO303SP H

Manufacturer Part Number
BSO303SP H
Description
MOSFET P-CH 30V 7.2A 8DSO
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of BSO303SP H

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
21 mOhm @ 9.1A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7.2A
Vgs(th) (max) @ Id
2V @ 100µA
Gate Charge (qg) @ Vgs
54nC @ 10V
Input Capacitance (ciss) @ Vds
2330pF @ 25V
Power - Max
1.56W
Mounting Type
Surface Mount
Package / Case
DSO-8
Package
SO-8
Vds (max)
-30.0 V
Rds (on) (max) (@10v)
21.0 mOhm
Rds (on) (max) (@4.5v)
31.0 mOhm
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Rev. 1.1
Features
• single P-Channel in SO8
• Enhancement mode
• Logic level
• 150°C operating temperature
• Qualified according JEDEC for traget applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
BSO303SP H
®
-P Power-Transistor
2)
j
Package
PG-DSO-8
=25 °C, unless otherwise specified
1)
Symbol Conditions
I
I
E
V
P
T
D
D,pulse
j
AS
GS
tot
, T
stg
Marking
303SP
T
T
T
T
T
I
T
JESD22-A114 HBM
D
page 1
A
A
A
A
A
A
= -9.1 A, R
=25 °C
=70 °C
=25 °C
=70 °C
=25 °C
=25 °C
2)
1)
GS
Product Summary
V
R
I
PG-DSO-8
D
=25 Ω
DS
DS(on),max
Lead free
Yes
≤10 secs
2.50
-9.1
-7.1
-8.9
-7.1
V
V
1B (500V - 1 kV)
GS
GS
Halogen free
-55 ... 150
55/150/56
=-4.5 V
=-2.5 V
Yes
Value
260
±20
-36
97
steady state
1.56
-7.2
-5.8
-7.2
-5.8
BSO303SP H
-9.1
-30
21
31
packing
Unit
A
A
mJ
V
W
°C
°C
dry
V
mΩ
mΩ
A
2010-05-12

Related parts for BSO303SP H

BSO303SP H Summary of contents

Page 1

... A T =25 ° =70 ° =25 °C D,pulse A =25 Ω -9 =25 °C tot stg JESD22-A114 HBM page 1 BSO303SP H - =-4 mΩ =-2 mΩ GS -9.1 A Halogen free packing Yes dry Value Unit ≤10 secs steady state -9.1 -7.2 A -7.1 -5.8 -8.9 -7.2 A -7.1 -5.8 - ± ...

Page 2

... GS(th) I =-100 µ =- DSS T =25 ° =- =150 ° =- GSS =-4 DS(on) I =-7 =- =-9.1 A DS(on |>2 DS(on)max =-7 (one layer, 70 µm thick) copper area for drain page 2 BSO303SP H Values Unit min. typ. max K 110 - - 150 , - - - -1 -0.1 -1 µA - -10 -100 - - -100 mΩ 2010-05-12 ...

Page 3

... MHz DS C rss t d(on Ω d(off g( plateau oss =25 ° S,pulse =-9 =25 ° = =-9 /dt =100 A/µ page 3 BSO303SP H Values min. typ. max. - 1750 2330 - 470 625 - 390 580 - -4.8 -6.4 - -2.6 -3.5 - -14 -21 - -16 -24 - -40 - - -36.5 - -0.88 -1 Unit 2010-05-12 ...

Page 4

... Rev. 1.1 2 Drain current I =f 120 160 [° Max. transient thermal impedance Z =f(t thJS p parameter 100 10 µs 1 µs 0.5 100 µ 0. 0.01 10 100 0.00001 [V] DS page 4 BSO303SP H |≥ ≤ 120 T [° single pulse 0.0001 0.001 0.01 0 [s] p 160 2010-05-12 ...

Page 5

... Typ. output characteristics I =f =25 ° parameter - Typ. transfer characteristics I =f |>2 DS(on)max parameter Rev. 1.1 6 Typ. drain-source on resistance R =f(I DS(on) parameter - -2 Typ. forward transconductance g =f °150 C ° [V] GS page 5 BSO303SP =25 ° 2 -3.2 V -3.5 V -2.7 V -4 [A] D =25 ° [ 2010-05-12 ...

Page 6

... GS(th) 2 1 100 140 180 -60 [° Forward characteristics of reverse diode I =f parameter: T 100 [V] DS page 6 BSO303SP H =-100 µ max. typ. min. - 100 140 T [° °C, 98% 25 °C, typ 150 °C, typ 150 °C, 98% 0.5 1 1.5 -V [V] SD 180 2 2010-05-12 ...

Page 7

... I =f parameter: T j(start Drain-source breakdown voltage =-250 µ BR(DSS -60 - Rev. 1.1 14 Typ. gate charge V =f(Q GS parameter 100 8 125 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 BSO303SP =-9.1 A pulsed gate [nC] gate ate 2010-05-12 ...

Page 8

... Package Outline P-DSO-8: Outline Rev. 1.1 page 8 BSO303SP H 2010-05-12 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 9 BSO303SP H 2010-05-12 ...

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