BSO303SP H Infineon Technologies, BSO303SP H Datasheet - Page 7

• Manufacturer Part Number: BSO303SP H
• Description: MOSFET P-CH 30V 7.2A 8DSO
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO303SP H

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 9.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.2A
• Vgs(th) (max) @ Id: 2V @ 100µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 2330pF @ 25V
• Power - Max: 1.56W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Package: SO-8
• Vds (max): -30.0 V
• Rds (on) (max) (@10v): 21.0 mOhm
• Rds (on) (max) (@4.5v): 31.0 mOhm
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.1
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
10
36
34
32
30
28
26
24
22
20
AV
1
-60
=f(T
); R
1
j
GS
); I
j(start)
-20
=25 Ω
D
=-250 µA
10
20
t
T
AV
j
60
[°C]
[µs]
125
100
100
100
140
25
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
10
V
9
8
7
6
5
4
3
2
1
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
=-9.1 A pulsed
g s
10
-Q
Q
g
gate
Q
20
sw
[nC]
Q
6
g d
15
BSO303SP H
30
24
Q
g ate
2010-05-12
40