BSO303SP H Infineon Technologies, BSO303SP H Datasheet - Page 5

• Manufacturer Part Number: BSO303SP H
• Description: MOSFET P-CH 30V 7.2A 8DSO
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO303SP H

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 9.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.2A
• Vgs(th) (max) @ Id: 2V @ 100µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 2330pF @ 25V
• Power - Max: 1.56W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Package: SO-8
• Vds (max): -30.0 V
• Rds (on) (max) (@10v): 21.0 mOhm
• Rds (on) (max) (@4.5v): 31.0 mOhm
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.1
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
40
35
30
25
20
15
10
40
30
20
10
DS
GS
5
0
0
); T
0
0
); |V
j
=25 °C
j
GS
DS
-10 V
|>2|I
1
D
-4.5 V
|R
1
DS(on)max
-V
-V
C °150
DS
GS
2
[V]
[V]
C °25
2
3
-2.3 V
-2.7 V
-2.5 V
-3.2 V
-3.5 V
-3 V
page 5
3
4
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
60
50
40
30
20
10
40
30
20
10
D
=f(I
0
0
); T
0
0
2.5 V
D
j
); T
=25 °C
GS
-2.7 V
j
=25 °C
10
-3 V
10
-3.2 V
-I
-I
D
D
20
[A]
[A]
20
-3.5 V
BSO303SP H
-4.5 V
-10 V
30
2010-05-12
40
30