IPD180N10N3 G Infineon Technologies, IPD180N10N3 G Datasheet - Page 2

• Manufacturer Part Number: IPD180N10N3 G
• Description: MOSFET N-CH 100V 43A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD180N10N3 G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 33A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 43A
• Vgs(th) (max) @ Id: 3.5V @ 33µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 50V
• Power - Max: 71W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (5 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Parameter
Thermal characteristics
Electrical characteristics,
Static characteristics
T
Symbol Conditions
R
R
V
V
I
I
R
R
g
V
V
V
T
V
T
V
V
V
I
V
V
I R
I
I
I
V
I
V
V
min.
Values
typ.
IPD180N10N3 G
max.
Unit