IPD180N10N3 G Infineon Technologies, IPD180N10N3 G Datasheet - Page 8

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IPD180N10N3 G

Manufacturer Part Number
IPD180N10N3 G
Description
MOSFET N-CH 100V 43A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPD180N10N3 G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
18 mOhm @ 33A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
43A
Vgs(th) (max) @ Id
3.5V @ 33µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
1800pF @ 50V
Power - Max
71W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (5 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IPD180N10N3 G
PG-TO-252

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