IPD180N10N3 G Infineon Technologies, IPD180N10N3 G Datasheet - Page 4

• Manufacturer Part Number: IPD180N10N3 G
• Description: MOSFET N-CH 100V 43A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD180N10N3 G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 33A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 43A
• Vgs(th) (max) @ Id: 3.5V @ 33µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 50V
• Power - Max: 71W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (5 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1 Power dissipation
P
3 Safe operating area
I
V
10
10
10
10
80
70
60
50
40
30
20
10
T
0
3
2
1
0
10
0
-1
T
t
50
10
0
D
T
V
C
100
DS
10
[°C]
1
[V]
150
10
2
200
10
3
2 Drain current
I
4 Max. transient thermal impedance
Z
T
10
10
10
10
50
40
30
20
10
0
-1
-2
t
1
0
10
0
V
-5
D t T
10
-4
50
10
-3
T
t
C
100
p
[°C]
[s]
10
-2
IPD180N10N3 G
150
10
-1
200
10
0