NDF08N50ZG ON Semiconductor, NDF08N50ZG Datasheet - Page 2

• Manufacturer Part Number: NDF08N50ZG
• Description: MOSFET N-CH 500V 7.5A TO-220FP
• Manufacturer: ON Semiconductor

Specifications of NDF08N50ZG

• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Mounting Type: Through Hole
• Power - Max: 31W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Drain To Source Voltage (vdss): 500V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 3.6A, 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.69 Ohms
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 4.7 A
• Power Dissipation: 31 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Gate Charge Qg: 31 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3. Insertion mounted
4. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
THERMAL RESISTANCE
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 4)
DYNAMIC CHARACTERISTICS
RESISTIVE SWITCHING CHARACTERISTICS
SOURCE−DRAIN DIODE CHARACTERISTICS (T
Junction−to−Case (Drain)
Junction−to−Ambient Steady State (Note 3)
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature
Drain−to−Source Leakage Current
Gate−to−Source Forward Leakage
Static Drain−to−Source
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain (“Miller”) Charge
Plateau Voltage
Gate Resistance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Coefficient
On−Resistance
Characteristic
Parameter
(T
V
J
DS
= 25°C unless otherwise noted)
I
S
= 500 V, V
V
V
V
V
V
V
V
V
= 7.5 A, di/dt = 100 A/ms
V
DD
I
DS
DD
DS
DS
C
S
GS
Reference to 25°C,
GS
GS
GS
Test Conditions
= 7.5 A, V
= 25°C unless otherwise noted)
= 250 V, I
= V
= 250 V, I
= 15 V, I
= 25 V, V
= 0 V, V
V
= 10 V, I
= 10 V, R
f = 1.0 MHz
= 0 V, I
V
I
GS
D
GS
GS
http://onsemi.com
= 1 mA
GS
= ±20 V
, I
= 10 V
D
D
D
DD
= 0 V
D
GS
D
D
GS
= 100 mA
= 1 mA
= 3.75 A
G
= 3.6 A
= 7.5 A,
= 7.5 A,
= 30 V
= 5 W
= 0 V
= 0 V,
2
150°C
25°C
DBV
Symbol
Symbol
R
V
BV
R
t
t
R
I
C
I
DS(on)
DT
GS(th)
C
C
V
V
g
Q
Q
d(on)
d(off)
GSS
DSS
Q
Q
R
qJC
qJA
t
oss
t
FS
rss
GP
t
SD
DSS
iss
rr
gs
gd
r
f
DSS
g
g
rr
J
/
NDF08N50Z
Min
500
3.0
4.0
50
0.69
1.85
Typ
912
120
295
0.6
6.0
6.2
6.3
3.0
27
31
17
13
23
31
29
NDP08N50Z
1.0
50
Max
0.85
±10
4.5
1.6
50
1
°C/W
V/°C
Unit
Unit
mA
mA
pF
nC
mC
ns
ns
W
W
V
V
S
V
V