NDF08N50ZG ON Semiconductor, NDF08N50ZG Datasheet - Page 3

MOSFET N-CH 500V 7.5A TO-220FP

NDF08N50ZG

Manufacturer Part Number
NDF08N50ZG
Description
MOSFET N-CH 500V 7.5A TO-220FP
Manufacturer
ON Semiconductor
Datasheet

Specifications of NDF08N50ZG

Package / Case
TO-220-3 Full Pack (Straight Leads)
Mounting Type
Through Hole
Power - Max
31W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
31nC @ 10V
Vgs(th) (max) @ Id
4.5V @ 100µA
Current - Continuous Drain (id) @ 25° C
7.5A
Drain To Source Voltage (vdss)
500V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 3.6A, 10V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.69 Ohms
Forward Transconductance Gfs (max / Min)
6 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
4.7 A
Power Dissipation
31 W
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
Gate Charge Qg
31 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NDF08N50ZG
Manufacturer:
ON
Quantity:
5 950
Part Number:
NDF08N50ZG
Manufacturer:
ON Semiconductor
Quantity:
5
20.0
18.0
16.0
14.0
12.0
10.0
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
8.0
6.0
4.0
2.0
0.0
0.0
5.5
−50
Figure 3. On−Region versus Gate−to−Source
V
I
D
GS
6.0
Figure 5. On−Resistance Variation with
= 3.6 A
−25
Figure 1. On−Region Characteristics
V
= 10 V
V
DS
5.0
GS
T
, DRAIN−TO−SOURCE VOLTAGE (V)
6.5
J
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
V
7.0
GS
25
10.0
Temperature
= 10 V
Voltage
7.5
50
8.0 V
8.0
15.0
75
8.5
TYPICAL CHARACTERISTICS
100
9.0
20.0
6.5 V
6.0 V
5.5 V
5.0 V
T
7.0 V
I
D
J
= 3.6 A
= 25°C
http://onsemi.com
125
9.5
25.0
150
10
3
20.0
18.0
16.0
14.0
12.0
10.0
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
0.60
0.55
0.50
1.15
1.10
1.05
1.00
0.95
0.90
8.0
6.0
4.0
2.0
0.0
−50
0.0
3
V
V
I
Figure 6. BV
T
D
DS
GS
1.0
J
= 1 mA
Figure 4. On−Resistance versus Drain
−25
= 25°C
= 25 V
T
= 10 V
4
V
J
Figure 2. Transfer Characteristics
GS
= 150°C
2.0
T
J
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
Current and Gate Voltage
0
I
3.0
5
D
DSS
, DRAIN CURRENT (A)
25
4.0
Variation with Temperature
6
T
5.0
50
J
= −55°C
T
7
6.0
J
75
= 25°C
7.0
8
100
8.0
125
9
9.0
150
10
10

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