NDF08N50ZG ON Semiconductor, NDF08N50ZG Datasheet - Page 4

• Manufacturer Part Number: NDF08N50ZG
• Description: MOSFET N-CH 500V 7.5A TO-220FP
• Manufacturer: ON Semiconductor

Specifications of NDF08N50ZG

• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Mounting Type: Through Hole
• Power - Max: 31W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Drain To Source Voltage (vdss): 500V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 3.6A, 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.69 Ohms
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 4.7 A
• Power Dissipation: 31 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Gate Charge Qg: 31 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
0.10
100
1.0
1.0
10
10
1
0
Figure 10. Resistive Switching Time Variation
Figure 7. Drain−to−Source Leakage Current
V
T
V
50
DD
I
T
J
D
GS
J
= 125°C
V
= 7.5 A
= 150°C
= 250 V
= 10 V
DS
100 150 200 250 300 350 400 450 500
, DRAIN−TO−SOURCE VOLTAGE (V)
R
versus Gate Resistance
G
, GATE RESISTANCE (W)
versus Voltage
15.0
14.0
13.0
12.0
10.0
11.0
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
Drain−to−Source Voltage versus Total Charge
Q
GS
Figure 9. Gate−to−Source Voltage and
4
TYPICAL CHARACTERISTICS
Q
g
8
, TOTAL GATE CHARGE (nC)
V
DS
t
http://onsemi.com
t
t
t
d(off)
r
d(on)
f
12
100
Q
Q
GD
16
4
T
2000
1800
1600
1400
1200
1000
10.0
800
600
400
200
1.0
0.1
20
0
0.3
0
C
V
T
rss
I
DS
24
Figure 11. Diode Forward Voltage versus
D
J
0.4
5
T
V
= 7.5 A
= 25°C
= 250 V
J
V
GS
V
DS
= 150°C
SD
Figure 8. Capacitance Variation
10
28
0.5
, DRAIN−TO−SOURCE VOLTAGE (V)
, SOURCE−TO−DRAIN VOLTAGE (V)
15
0.6
32
C
125°C
C
300
250
200
150
100
50
0
oss
iss
20
Current
0.7
25
25°C
0.8
30
−55°C
0.9
35
1.0
T
V
f = 1 MHz
40
J
GS
= 25°C
= 0 V
1.1
45
1.2
50