IPW90R1K2C3 Infineon Technologies, IPW90R1K2C3 Datasheet - Page 4

• Manufacturer Part Number: IPW90R1K2C3
• Description: MOSFET N-CH 900V 5.1A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPW90R1K2C3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 5.1A
• Vgs(th) (max) @ Id: 3.5V @ 310µA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 710pF @ 100V
• Power - Max: 83W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.1A
• Drain Source Voltage Vds: 900V
• On Resistance Rds(on): 1.2ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.1 A
• Power Dissipation: 83 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000413754

Rev. 1.0
1 Power dissipation
P
3 Max. transient thermal impedance
Z
parameter: D=t
thJC
tot
=f(T
=f(t
10
10
10
10
10
10
10
10
10
10
10
10
90
80
70
60
50
40
30
20
10
0
-1
-1
-1
-2
-2
-2
1
1
1
0
0
0
P
C
10
10
10
0
)
)
0.02
0.02
-5
-5
-5
single pulse
single pulse
0.05
0.05
0.05
0.02
single pulse
0.1
0.1
0.1
0.01
0.5
0.5
0.5
0.2
0.2
0.2
0.01
0.01
25
p
/T
10
10
10
-4
-4
-4
50
T
t
t
t
C
10
10
10
p
p
p
75
[°C]
[s]
[s]
[s]
-3
-3
-3
100
10
10
10
-2
-2
-2
125
150
10
10
10
page 4
-1
-1
-1
2 Safe operating area
I
parameter: t
4 Typ. output characteristics
I
parameter: V
D
D
=f(V
=f(V
10
10
10
10
15
10
DS
DS
-1
5
0
2
1
0
1
0
); T
); T
limited by on-state
resistance
C
p
J
=25 °C
GS
=25 °C; D =0
5
10
10
V
V
DS
DS
[V]
[V]
1 ms
DC
15
10 ms
100
100 µs
IPW90R1K2C3
5.5 V
4.5 V
5 V
4 V
8 V
10 V
20
10 µs
20 V
6 V
1 µs
2008-07-30
1000
25