IPW90R1K2C3 Infineon Technologies, IPW90R1K2C3 Datasheet - Page 5

• Manufacturer Part Number: IPW90R1K2C3
• Description: MOSFET N-CH 900V 5.1A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPW90R1K2C3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 5.1A
• Vgs(th) (max) @ Id: 3.5V @ 310µA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 710pF @ 100V
• Power - Max: 83W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.1A
• Drain Source Voltage Vds: 900V
• On Resistance Rds(on): 1.2ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.1 A
• Power Dissipation: 83 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000413754

Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Drain-source on-state resistance
R
D
=f(V
DS(on)
3.5
2.5
1.5
0.5
3
2
1
0
7
6
5
4
3
2
1
0
DS
=f(T
-60
0
); T
J
); I
J
=150 °C
GS
-20
D
=2.8 A; V
5
20
98 %
10
GS
V
T
=10 V
DS
j
60
[°C]
typ
[V]
15
100
6 V
4.5 V
4 V
8 V
20
140
10 V
5 V
20 V
5.5 V
180
page 5
25
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. transfer characteristics
I
parameter: T
D
DS(on)
=f(V
14
12
10
15
10
8
6
4
2
0
5
0
=f(I
GS
0
0
); V
D
); T
DS
GS
J
=20V
J
4 V
=150 °C
2
2
4.5 V
4
4
V
I
D
GS
4.8 V
[A]
[V]
6
6
150 °C
25 °C
5 V
IPW90R1K2C3
10 V
8
8
2008-07-30
10
10