IPW90R1K2C3 Infineon Technologies, IPW90R1K2C3 Datasheet - Page 6

• Manufacturer Part Number: IPW90R1K2C3
• Description: MOSFET N-CH 900V 5.1A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPW90R1K2C3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 5.1A
• Vgs(th) (max) @ Id: 3.5V @ 310µA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 710pF @ 100V
• Power - Max: 83W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.1A
• Drain Source Voltage Vds: 900V
• On Resistance Rds(on): 1.2ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.1 A
• Power Dissipation: 83 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000413754

Rev. 1.0
9 Typ. gate charge
V
parameter: V
11 Avalanche energy
E
GS
AS
=f(T
=f(Q
70
60
50
40
30
20
10
10
0
8
6
4
2
0
25
0
j
); I
gate
D
); I
=0.92 A; V
DD
D
50
=2.8 A pulsed
10
DD
75
Q
=50 V
T
gate
J
[°C]
[nC]
400 V
100
20
720 V
125
150
page 6
30
10 Forward characteristics of reverse diode
I
parameter: T
12 Drain-source breakdown voltage
V
F
=f(V
BR(DSS)
1050
1000
950
900
850
800
10
10
10
10
-1
SD
2
1
0
-60
=f(T
0
)
j
); I
J
-20
D
=0.25 mA
0.5
150 °C
20
25 °C
T
V
J
SD
60
[°C]
1
[V]
100
IPW90R1K2C3
1.5
25 °C, 98%
140
150 °C, 98%
2008-07-30
180
2