IPW60R199CP Infineon Technologies, IPW60R199CP Datasheet

MOSFET N-CH 600V 16A TO-247

IPW60R199CP

Manufacturer Part Number
IPW60R199CP
Description
MOSFET N-CH 600V 16A TO-247
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheets

Specifications of IPW60R199CP

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
199 mOhm @ 9.9A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
3.5V @ 1.1mA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
1520pF @ 100V
Power - Max
139W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
16A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
199mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature
RoHS Compliant
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.199 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
16 A
Power Dissipation
139 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPW60R199CPX
IPW60R199CPXK
SP000089802

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPW60R199CP
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPW60R199CP
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
IPW60R199CP
Quantity:
480
Company:
Part Number:
IPW60R199CP
Quantity:
47
Rev. 2.1
Features
• Lowest figure-of-merit R
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
• Pb-free lead plating; RoHS compliant
CoolMOS CP is specially designed for:
• Hard switching topologies, for Server and Telecom
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
Mounting torque
CoolMOS
Type
IPW60R199CP
TM
Power Transistor
2)
Package
PG-TO247-3-1
j
=25 °C, unless otherwise specified
ON
xQ
AR
AR
g
1)
2),3)
2),3)
for target applications
Symbol Conditions
Ordering Code
I
I
E
E
I
dv /dt
V
P
T
D
D,pulse
AR
SP000089802
j
AS
AR
GS
tot
, T
stg
T
T
T
I
I
V
static
AC (f >1 Hz)
T
M3 and M3.5 screws
D
D
page 1
C
C
C
C
DS
=6.6 A, V
=6.6 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=0...480 V
DD
DD
Product Summary
V
R
Q
=50 V
=50 V
DS
DS(on),max
g,typ
Marking
6R199P
@ T
j,max
PG-TO247-3-1
-55 ... 150
Value
0.66
436
±20
±30
139
6.6
16
10
51
50
60
IPW60R199CP
0.199 Ω
650
33
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
V
nC
2007-05-09

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IPW60R199CP Summary of contents

Page 1

... =25 °C D,pulse =6 = 2 2), =0...480 static >1 Hz =25 °C tot stg M3 and M3.5 screws page 1 IPW60R199CP @ T 650 DS j,max 0.199 Ω DS(on),max 33 g,typ PG-TO247-3-1 Marking 6R199P Value 436 0.66 6.6 50 ±20 ±30 139 -55 ... 150 Unit V/ °C Ncm 2007-05-09 ...

Page 2

... GS(th =600 DSS T =25 ° =600 =150 ° = GSS = =9 DS(on) T =25 ° = =9 =150 ° MHz, open drain G page 2 IPW60R199CP Value Unit 9 V/ns Values Unit min. typ. max 0.9 K 260 °C 600 - - V 2 µ 100 nA 0.199 Ω - 0.18 - 0.49 - Ω ...

Page 3

... R d(off =400 plateau =9 =25 ° =400 /dt =100 A/µ rrm =400V, V < <T , identical low side and high side switch. peak (BR)DSS j jmax oss while V oss page 3 IPW60R199CP Values min. typ. max. - 1520 - - 180 - - 5 0.9 1.2 - 340 - , - 5 * while V is rising from DSS ...

Page 4

... Max. transient thermal impedance Z =f(t ) thJC P parameter: D 0.5 0.2 0 0.05 0.02 0.01 single pulse - Rev. 2.1 2 Safe operating area I =f parameter 120 160 10 [° Typ. output characteristics I =f parameter [s] p page 4 IPW60R199CP =25 ° limited by on-state resistance 10 µs 100 µ [V] DS =25 ° µ 2007-05-09 ...

Page 5

... T Rev. 2.1 6 Typ. drain-source on-state resistance R =f(I DS(on) parameter 0.8 5 0.4 4 Typ. transfer characteristics I =f parameter typ 100 140 180 0 [°C] j page 5 IPW60R199CP ); T =150 ° 6 5 [A] D |>2 DS(on)max j C °25 C °150 [ 2007-05-09 ...

Page 6

... Forward characteristics of reverse diode I =f parameter 120 V 400 [nC] 12 Drain-source breakdown voltage V =f(T BR(DSS) 700 660 620 580 540 100 140 180 -60 [°C] j page 6 IPW60R199CP j 25 °C, 98% 150 °C, 98% 25 °C 150 °C 0.5 1 1 =0. - 100 140 T [° 180 2007-05-09 ...

Page 7

... Typ. capacitances C =f MHz Ciss Coss Crss 100 200 V Rev. 2.1 14 Typ. Coss stored energy E = f(V oss 300 400 500 0 [V] DS page 7 IPW60R199CP ) 100 200 300 400 500 V [V] DS 600 2007-05-09 ...

Page 8

... Definition of diode switching characteristics Rev. 2.1 page 8 IPW60R199CP 2007-05-09 ...

Page 9

... PG-TO247-3-21-41: Outlines Dimensions in mm/inches Rev. 2.1 page 9 IPW60R199CP 2007-05-09 ...

Page 10

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 page 10 IPW60R199CP 2007-05-09 ...

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