IPW60R199CP Infineon Technologies, IPW60R199CP Datasheet - Page 2

• Manufacturer Part Number: IPW60R199CP
• Description: MOSFET N-CH 600V 16A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPW60R199CP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 3.5V @ 1.1mA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 1520pF @ 100V
• Power - Max: 139W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 16A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 199mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature: RoHS Compliant
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.199 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Power Dissipation: 139 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPW60R199CPX; IPW60R199CPXK; SP000089802

Rev. 2.1
Maximum ratings, at T
Parameter
Continuous diode forward current
Diode pulse current
Reverse diode dv /dt
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
Soldering temperature,
wavesoldering only allowed at leads
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
2)
4)
j
=25 °C, unless otherwise specified
j
=25 °C, unless otherwise specified
Symbol Conditions
Symbol Conditions
I
I
dv /dt
R
R
T
V
V
I
I
R
R
S
S,pulse
DSS
GSS
sold
(BR)DSS
GS(th)
thJC
thJA
DS(on)
G
T
leaded
1.6 mm (0.063 in.)
from case for 10 s
V
V
V
T
V
T
V
V
T
V
T
f =1 MHz, open drain
page 2
C
j
j
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=150 °C
=25 °C
=150 °C
=25 °C
=V
=600 V, V
=600 V, V
=0 V, I
=20 V, V
=10 V, I
=10 V, I
GS
, I
D
D
=250 µA
D
D
=1.1 mA
DS
=9.9 A,
=9.9 A,
GS
GS
=0 V
=0 V,
=0 V,
min.
600
2.5
-
-
-
-
-
-
-
-
-
Values
Value
0.18
0.49
typ.
9.9
51
15
10
3
2
-
-
-
-
-
-
IPW60R199CP
0.199 Ω
max.
260
100
0.9
3.5
62
1
-
-
-
-
Unit
A
V/ns
Unit
K/W
°C
V
µA
nA
Ω
2007-05-09