IPW60R199CP Infineon Technologies, IPW60R199CP Datasheet - Page 6

• Manufacturer Part Number: IPW60R199CP
• Description: MOSFET N-CH 600V 16A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPW60R199CP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 3.5V @ 1.1mA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 1520pF @ 100V
• Power - Max: 139W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 16A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 199mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature: RoHS Compliant
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.199 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Power Dissipation: 139 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPW60R199CPX; IPW60R199CPXK; SP000089802

Rev. 2.1
9 Typ. gate charge
V
parameter: V
11 Avalanche energy
E
GS
AS
=f(T
500
400
300
200
100
=f(Q
10
0
9
8
7
6
5
4
3
2
1
0
20
j
0
); I
gate
D
); I
=6.6 A; V
DD
D
=9.9 A pulsed
60
10
DD
=50 V
Q
T
gate
100
j
20
[°C]
[nC]
120 V
400 V
140
30
page 6
40
180
10 Forward characteristics of reverse diode
I
parameter: T
12 Drain-source breakdown voltage
V
F
=f(V
BR(DSS)
700
660
620
580
540
10
10
10
10
SD
-1
-60
2
1
0
=f(T
)
0
j
); I
j
-20
D
=0.25 mA
0.5
150 °C
20
V
T
SD
j
60
[°C]
25 °C
1
[V]
100
IPW60R199CP
1.5
25 °C, 98%
150 °C, 98%
140
2007-05-09
180
2