IPP041N12N3 G Infineon Technologies, IPP041N12N3 G Datasheet - Page 10

• Manufacturer Part Number: IPP041N12N3 G
• Description: MOSFET N-CH 120V 120A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP041N12N3 G

• Package / Case: TO-220-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.1 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 120V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 270µA
• Gate Charge (qg) @ Vgs: 211nC @ 10V
• Input Capacitance (ciss) @ Vds: 13800pF @ 60V
• Power - Max: 300W
• Mounting Type: Through Hole
• Gate Charge Qg: 158 nC
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.8 mOhms
• Forward Transconductance Gfs (max / Min): 165 S, 83 S
• Drain-source Breakdown Voltage: 120 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPP041N12N3GXK

IPI041N12N3 G
IPP041N12N3 G
IPB038N12N3 G
PG-TO-263 (D²-Pak)
Rev. 2.2
page 10
2009-07-16