IPP041N12N3 G Infineon Technologies, IPP041N12N3 G Datasheet - Page 2

• Manufacturer Part Number: IPP041N12N3 G
• Description: MOSFET N-CH 120V 120A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP041N12N3 G

• Package / Case: TO-220-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.1 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 120V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 270µA
• Gate Charge (qg) @ Vgs: 211nC @ 10V
• Input Capacitance (ciss) @ Vds: 13800pF @ 60V
• Power - Max: 300W
• Mounting Type: Through Hole
• Gate Charge Qg: 158 nC
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.8 mOhms
• Forward Transconductance Gfs (max / Min): 165 S, 83 S
• Drain-source Breakdown Voltage: 120 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPP041N12N3GXK

Rev. 2.2
1)
2)
3)
4)
5)
connection. PCB is vertical in still air.
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
J-STD20 and JESD22
Current is limited by bondwire; with an R
See figure 3
T
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
jmax
=150 °C and duty cycle D=0.01 for V
j
=25 °C, unless otherwise specified
thJC
Symbol Conditions
R
R
V
V
I
I
R
R
g
gs
DSS
GSS
fs
<-5V
(BR)DSS
GS(th)
=0.5 K/W the chip is able to carry 182 A.
thJC
thJA
DS(on)
G
minimal footprint
6 cm
V
V
V
T
V
T
V
V
V
TO263
|V
I
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=125 °C
=100 A
DS
=V
=100 V, V
=100 V, V
=0 V, I
=20 V, V
=10 V, I
=10 V, I
|>2|I
2
cooling area
GS
, I
D
2
|R
D
(one layer, 70 µm thick) copper area for drain
D
=1 mA
D
D
=270 µA
DS
DS(on)max
=100 A
=100 A,
GS
GS
=0 V
=0 V,
=0 V,
IPP041N12N3 G
5)
,
min.
120
83
2
-
-
-
-
-
-
-
-
-
Values
typ.
165
0.1
3.5
3.2
1.4
10
3
1
-
-
-
-
IPB038N12N3 G
IPI041N12N3 G
max.
100
100
0.5
4.1
3.8
62
40
4
1
-
-
-
Unit
K/W
V
µA
nA
m
S
2009-07-16