IPP05CN10N G Infineon Technologies, IPP05CN10N G Datasheet
IPP05CN10N G
Specifications of IPP05CN10N G
IPP05CN10NGIN
IPP05CN10NGX
IPP05CN10NGXK
SP000096461
SP000680814
Related parts for IPP05CN10N G
IPP05CN10N G Summary of contents
Page 1
... =25 °C D,pulse C =25 Ω =100 =100 /dt di /dt =100 A/µs, T =175 °C j,max =25 °C tot stg page 1 IPB05CN10N G IPI05CN10N G IPP05CN10N G 100 V 5.1 mΩ 100 A Value Unit 100 A 100 400 826 mJ 6 kV/µs ±20 V 300 W -55 ... 175 °C 55/175/56 2008-06-23 ...
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... D R DS(on) TO220, TO262 V = =100 TO263 |>2 DS(on)max =100 A D =0.5 K/W the chip is able to carry 161 A. thJC <- (one layer, 70 µm thick) copper area for drain page 2 IPB05CN10N G IPI05CN10N G IPP05CN10N G Values Unit min. typ. max 0.5 K 100 - - 0.1 1 µ 100 - 1 100 ...
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... MHz C rss t d( =1.6 Ω d(off = =100 plateau oss =25 ° S,pulse =100 =25 ° = /dt =100 A/µ page 3 IPB05CN10N G IPI05CN10N G IPP05CN10N G Values Unit min. typ. max. - 9050 12000 pF - 1370 1820 - 75 112 - 136 181 - 5 145 193 100 400 - 1.0 1 110 ns - 360 - nC 2008-06-23 ...
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... Drain current I =f 120 100 100 150 200 0 [° Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 100 µ [V] DS page 4 IPB05CN10N G IPI05CN10N G IPP05CN10N G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 200 0 10 2008-06-23 ...
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... DS(on)max parameter 300 250 200 150 100 175 ° Rev. 1.09 6 Typ. drain-source on resistance R =f(I DS(on) parameter 6 [ Typ. forward transconductance g =f 200 160 120 80 25 ° [V] GS page 5 IPB05CN10N G IPI05CN10N G IPP05CN10N =25 ° 4 5 100 I [A] D =25 ° 100 I [ 150 150 2008-06-23 ...
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... GS(th) parameter 3.5 3 2.5 2 typ 1 100 140 180 -60 [° Forward characteristics of reverse diode I =f parameter [V] DS page 6 IPB05CN10N G IPI05CN10N G IPP05CN10N 2500 µA 250 µA - 100 140 T [° °C 175 °C 25 °C, 98% 175 °C, 98% 0.5 1 1.5 V [V] SD 180 2 2008-06-23 ...
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... T Rev. 1.09 14 Typ. gate charge V =f(Q GS parameter °C 100 ° 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPB05CN10N G IPI05CN10N G IPP05CN10N =100 A pulsed gate 100 Q [nC] gate 150 Q g ate 2008-06-23 ...
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... PG-TO220-3: Outline Rev. 1.09 IPB05CN10N G page 8 IPI05CN10N G IPP05CN10N G 2008-06-23 ...
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... PG-TO262-3-1 (I²PAK) Rev. 1.09 IPB05CN10N G page 9 IPI05CN10N G IPP05CN10N G 2008-06-23 ...
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... PG-TO-263 (D²-Pak) Rev. 1.09 IPB05CN10N G page 10 IPI05CN10N G IPP05CN10N G 2008-06-23 ...
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... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.09 IPB05CN10N G page 11 IPI05CN10N G IPP05CN10N G 2008-06-23 ...