IPP05CN10N G Infineon Technologies, IPP05CN10N G Datasheet - Page 6
![MOSFET N-CH 100V 100A TO-220](/photos/5/61/56148/ipp05cn10n_g_sml.jpg)
IPP05CN10N G
Manufacturer Part Number
IPP05CN10N G
Description
MOSFET N-CH 100V 100A TO-220
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPP05CN10N_G.pdf
(11 pages)
Specifications of IPP05CN10N G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.4 mOhm @ 100A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
181nC @ 10V
Input Capacitance (ciss) @ Vds
12000pF @ 50V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
4.1mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +175°C
Configuration
Single
Resistance Drain-source Rds (on)
0.0054 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IPP05CN10N G
IPP05CN10NGIN
IPP05CN10NGX
IPP05CN10NGXK
SP000096461
SP000680814
IPP05CN10NGIN
IPP05CN10NGX
IPP05CN10NGXK
SP000096461
SP000680814
Rev. 1.09
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
10
12
10
DS
=f(T
8
6
4
2
0
5
4
3
2
1
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=100 A; V
20
20
Crss
Coss
Ciss
98 %
GS
V
T
=10 V
DS
j
60
40
[°C]
[V]
typ
100
60
140
180
page 6
80
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
3.5
2.5
1.5
0.5
10
10
10
10
=f(T
SD
4
3
2
1
0
3
2
1
0
-60
)
0
j
); V
D
j
GS
-20
IPB05CN10N G
=V
0.5
DS
20
175 °C
250 µA
V
T
SD
j
60
175 °C, 98%
[°C]
1
25 °C, 98%
[V]
2500 µA
25 °C
100
IPP05CN10N G
IPI05CN10N G
1.5
140
2008-06-23
180
2