IPP05CN10N G Infineon Technologies, IPP05CN10N G Datasheet - Page 3

• Manufacturer Part Number: IPP05CN10N G
• Description: MOSFET N-CH 100V 100A TO-220
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP05CN10N G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.4 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 181nC @ 10V
• Input Capacitance (ciss) @ Vds: 12000pF @ 50V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 4.1mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0054 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPP05CN10N G; IPP05CN10NGIN; IPP05CN10NGX; IPP05CN10NGXK; SP000096461; SP000680814

Rev. 1.09
6)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
See figure 16 for gate charge parameter definition
6)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
Q
V
Q
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
plateau
SD
iss
oss
rss
gs
gd
sw
g
oss
rr
V
f =1 MHz
V
I
V
V
V
T
V
T
V
di
D
page 3
C
j
GS
DD
DD
GS
DD
GS
R
=50 A, R
=25 °C
F
=25 °C
=50 V, I
/dt =100 A/µs
=0 V, V
=50 V, V
=50 V, I
=0 to 10 V
=50 V, V
=0 V, I
F
F
G
DS
=100 A,
=I
D
=1.6 Ω
GS
GS
=100 A,
=50 V,
S
=10 V,
=0 V
,
IPB05CN10N G
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
9050
1370
typ.
136
145
110
360
5.1
1.0
75
28
42
64
21
46
32
51
-
-
IPP05CN10N G
IPI05CN10N G
12000 pF
max.
1820
112
181
193
100
400
1.2
42
63
96
31
61
48
73
-
-
Unit
ns
nC
V
nC
A
V
ns
nC
2008-06-23