IPP05CN10N G Infineon Technologies, IPP05CN10N G Datasheet - Page 3
![MOSFET N-CH 100V 100A TO-220](/photos/5/61/56148/ipp05cn10n_g_sml.jpg)
IPP05CN10N G
Manufacturer Part Number
IPP05CN10N G
Description
MOSFET N-CH 100V 100A TO-220
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPP05CN10N_G.pdf
(11 pages)
Specifications of IPP05CN10N G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.4 mOhm @ 100A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
181nC @ 10V
Input Capacitance (ciss) @ Vds
12000pF @ 50V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
4.1mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +175°C
Configuration
Single
Resistance Drain-source Rds (on)
0.0054 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IPP05CN10N G
IPP05CN10NGIN
IPP05CN10NGX
IPP05CN10NGXK
SP000096461
SP000680814
IPP05CN10NGIN
IPP05CN10NGX
IPP05CN10NGXK
SP000096461
SP000680814
Rev. 1.09
6)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
See figure 16 for gate charge parameter definition
6)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
Q
V
Q
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
plateau
SD
iss
oss
rss
gs
gd
sw
g
oss
rr
V
f =1 MHz
V
I
V
V
V
T
V
T
V
di
D
page 3
C
j
GS
DD
DD
GS
DD
GS
R
=50 A, R
=25 °C
F
=25 °C
=50 V, I
/dt =100 A/µs
=0 V, V
=50 V, V
=50 V, I
=0 to 10 V
=50 V, V
=0 V, I
F
F
G
DS
=100 A,
=I
D
=1.6 Ω
GS
GS
=100 A,
=50 V,
S
=10 V,
=0 V
,
IPB05CN10N G
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
9050
1370
typ.
136
145
110
360
5.1
1.0
75
28
42
64
21
46
32
51
-
-
IPP05CN10N G
IPI05CN10N G
12000 pF
max.
1820
112
181
193
100
400
1.2
42
63
96
31
61
48
73
-
-
Unit
ns
nC
V
nC
A
V
ns
nC
2008-06-23