IRF9Z34STRL Vishay, IRF9Z34STRL Datasheet
IRF9Z34STRL
Specifications of IRF9Z34STRL
Related parts for IRF9Z34STRL
IRF9Z34STRL Summary of contents
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... PAK is suitable for high current applications because of its D low internal connection resistance and can dissipate up to P-Channel MOSFET 2 typical surface mount application. The through-hole version (IRF9Z34L, SiHF9Z34L) is available for low-profile applications PAK (TO-263) a IRF9Z34STRLPbF a SiHF9Z34STL-E3 a IRF9Z34STRL a SiHF9Z34STL = 25 °C, unless otherwise noted ° 100 ° ° ...
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... IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient (PCB a Mounted, steady-state) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... DS , 91093_02 Fig Typical Output Characteristics Document Number: 91093 S09-0045-Rev. A, 19-Jan-09 IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L - 4 µs Pulse Width ° 91093_03 - 4 µs Pulse Width T = 175 ° 91093_04 Fig Normalized On-Resistance vs. Temperature Vishay Siliconix ° ° 175 µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 2 ...
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... IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix 2000 MHz iss rss 1600 oss 1200 800 400 Drain-to-Source Voltage ( 91093_05 Fig Typical Capacitance vs. Drain-to-Source Voltage Total Gate Charge (nC) 91093_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 1 91093_07 Fig Typical Source-Drain Diode Forward Voltage ...
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... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91093 S09-0045-Rev. A, 19-Jan-09 IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L 125 150 175 Single Pulse (Thermal Response Rectangular Pulse Duration ( Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Maximum Avalanche Energy vs. Drain Current www.vishay.com 6 1200 Top 1000 Bottom 800 600 400 200 100 125 50 Starting T , Junction Temperature (°C) 91093_12c 7 150 175 Current regulator Same type as D.U.T. 50 kΩ ...
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... Inductor current * Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91093. ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...