HUF75623P3 Fairchild Semiconductor, HUF75623P3 Datasheet - Page 2

• Manufacturer Part Number: HUF75623P3
• Description: MOSFET N-CH 100V 22A TO-220AB
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF75623P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 64 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 52nC @ 20V
• Input Capacitance (ciss) @ Vds: 790pF @ 25V
• Power - Max: 85W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
Source to Drain Diode Specifications
©2001 Fairchild Semiconductor Corporation
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
SWITCHING SPECIFICATIONS (V
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
PARAMETER
PARAMETER
T
GS
C
= 25
= 10V)
SYMBOL
SYMBOL
o
V
r
Q
BV
t
Q
DS(ON)
Q
C, Unless Otherwise Specified
t
d(OFF)
C
C
GS(TH)
R
R
I
I
d(ON)
t
g(TOT)
C
Q
Q
GSS
t
Q
V
DSS
OFF
g(TH)
g(10)
OSS
ON
RSS
ISS
t
DSS
t
t
SD
RR
gs
gd
r
rr
JC
f
JA
I
V
V
V
V
I
TO-220
V
V
R
(Figures 18, 19)
V
V
V
V
f = 1MHz
(Figure 12)
I
I
I
I
D
D
SD
SD
SD
SD
DS
DS
GS
GS
DD
GS
GS
GS
GS
GS
DS
= 250 A, V
= 22A, V
= 22A
= 11A
= 22A, dI
= 22A, dI
= 95V, V
= 90V, V
= 25V, V
= 20V
= V
= 50V, I
= 0V to 20V
= 0V to 10V
= 0V to 2V
= 13
10V,
DS
, I
GS
D
D
SD
SD
GS
GS
GS
GS
= 10V (Figure 9)
= 22A
TEST CONDITIONS
= 250 A (Figure 10)
TEST CONDITIONS
/dt = 100A/ s
/dt = 100A/ s
= 0V
= 0V, T
= 0V,
= 0V (Figure 11)
V
I
I
(Figures 13, 16, 17)
D
g(REF)
C
DD
= 22A,
= 150
= 50V,
= 1.0mA
o
C
MIN
100
MIN
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
HUF75623P3, HUF75623S3ST Rev. B
0.054
TYP
790
215
TYP
7.9
1.7
3.5
8.7
42
47
39
43
23
70
-
-
-
-
-
-
-
-
-
-
-
-
-
0.064
MAX
MAX
1.76
1.25
1.00
250
130
100
313
100
62
75
52
28
1
4
2
-
-
-
-
-
-
-
-
-
-
UNITS
UNITS
o
o
C/W
C/W
nA
nC
nC
nC
nC
nC
pF
pF
pF
nC
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
A
A