HUF75623P3 Fairchild Semiconductor, HUF75623P3 Datasheet - Page 4

• Manufacturer Part Number: HUF75623P3
• Description: MOSFET N-CH 100V 22A TO-220AB
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF75623P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 64 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 52nC @ 20V
• Input Capacitance (ciss) @ Vds: 790pF @ 25V
• Power - Max: 85W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
300
100
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
40
30
20
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0
1
0
2
-80
1
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
FIGURE 7. TRANSFER CHARACTERISTICS
DD
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
= 15V
RESISTANCE vs JUNCTION TEMPERATURE
-40
V
V
DS
T
GS
J
3
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
0
DS(ON)
10
40
T
J
= 175
4
o
80
C
T
J
V
= 25
GS
T
T
SINGLE PULSE
(Continued)
T
120
J
C
J
= 10V, I
= MAX RATED
o
= 25
= -55
o
C
5
C)
100
o
o
C
160
C
D
100 s
10ms
1ms
= 22A
200
300
6
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
100
10
40
30
20
10
0.001
1.2
1.0
0.8
0.6
0
0
-80
FIGURE 8. SATURATION CHARACTERISTICS
STARTING T
CAPABILITY
JUNCTION TEMPERATURE
-40
If R = 0
t
If R
t
AV
AV
V
DS
T
= (L)(I
= (L/R)ln[(I
V
V
J
1
J
t
0
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
AV
GS
GS
= 150
0
, TIME IN AVALANCHE (ms)
0.01
= 20V
= 10V
AS
)/(1.3*RATED BV
o
C
AS
40
*R)/(1.3*RATED BV
2
HUF75623P3, HUF75623S3ST Rev. B
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
T
80
C
V
= 25
STARTING T
GS
DSS
0.1
= V
o
C
120
- V
DS
o
DSS
DD
3
C)
, I
V
)
D
V
V
GS
J
- V
= 250 A
GS
GS
160
= 25
= 5V
DD
= 7V
= 6V
) +1]
o
C
200
1
4