HUF75623P3 Fairchild Semiconductor, HUF75623P3 Datasheet - Page 5

• Manufacturer Part Number: HUF75623P3
• Description: MOSFET N-CH 100V 22A TO-220AB
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF75623P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 64 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 52nC @ 20V
• Input Capacitance (ciss) @ Vds: 790pF @ 25V
• Power - Max: 85W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
1.2
1.1
1.0
0.9
-80
I
D
VOLTAGE vs JUNCTION TEMPERATURE
= 250 A
-40
T
J
, JUNCTION TEMPERATURE (
0
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
40
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
80
10
8
6
4
2
0
0
(Continued)
120
V
DD
o
C)
= 50V
160
5
200
Q
g
, GATE CHARGE (nC)
10
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
WAVEFORMS IN
DESCENDING ORDER:
15
2000
1000
100
20
I
I
D
D
0.1
= 22A
= 11A
20
C
OSS
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
25
DS
1.0
+ C
GD
HUF75623P3, HUF75623S3ST Rev. B
C
RSS
10
V
C
= C
GS
ISS
GD
= 0V, f = 1MHz
C
GS
+ C
GD
100