HUF75623P3 Fairchild Semiconductor, HUF75623P3 Datasheet - Page 9

• Manufacturer Part Number: HUF75623P3
• Description: MOSFET N-CH 100V 22A TO-220AB
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF75623P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 64 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 52nC @ 20V
• Input Capacitance (ciss) @ Vds: 790pF @ 25V
• Power - Max: 85W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SPICE Thermal Model
REV 25 October 1999
HUF75623T
CTHERM1 th 6 1.40e-3
CTHERM2 6 5 5.55e-3
CTHERM3 5 4 5.65e-3
CTHERM4 4 3 6.10e-3
CTHERM5 3 2 9.80e-3
CTHERM6 2 tl 7.70e-2
RTHERM1 th 6 1.10e-2
RTHERM2 6 5 5.80e-2
RTHERM3 5 4 1.35e-1
RTHERM4 4 3 3.60e-1
RTHERM5 3 2 4.13e-1
RTHERM6 2 tl 4.30e-1
SABER Thermal Model
SABER thermal model HUF75623T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 1.40e-3
ctherm.ctherm2 6 5 = 5.55e-3
ctherm.ctherm3 5 4 = 5.65e-3
ctherm.ctherm4 4 3 = 6.10e-3
ctherm.ctherm5 3 2 = 9.80e-3
ctherm.ctherm6 2 tl = 7.70e-2
rtherm.rtherm1 th 6 = 1.10e-2
rtherm.rtherm2 6 5 = 5.80e-2
rtherm.rtherm3 5 4 = 1.35e-1
rtherm.rtherm4 4 3 = 3.60e-1
rtherm.rtherm5 3 2 = 4.13e-1
rtherm.rtherm6 2 tl = 4.30e-1
}
©2001 Fairchild Semiconductor Corporation
RTHERM5
RTHERM2
RTHERM3
RTHERM6
RTHERM1
RTHERM4
th
5
4
3
2
tl
6
JUNCTION
CASE
CTHERM5
CTHERM2
CTHERM3
CTHERM6
CTHERM1
CTHERM4
HUF75623P3, HUF75623S3ST Rev. B