HUF75329G3 Fairchild Semiconductor, HUF75329G3 Datasheet - Page 3

• Manufacturer Part Number: HUF75329G3
• Description: MOSFET N-CH 55V 49A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF75329G3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 24 mOhm @ 49A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 49A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 75nC @ 20V
• Input Capacitance (ciss) @ Vds: 1060pF @ 25V
• Power - Max: 128W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
Source to Drain Diode Specifications
Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.01
0.1
10
2
1
TEMPERATURE
-5
PARAMETER
25
PARAMETER
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
T
C
50
, CASE TEMPERATURE (
SINGLE PULSE
75
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
T
-4
C
= 25
100
o
C, Unless Otherwise Specified
125
SYMBOL
o
SYMBOL
C)
C
C
C
Q
OSS
V
RSS
ISS
t
SD
RR
rr
10
150
-3
t, RECTANGULAR PULSE DURATION (s)
V
f = 1MHz
(Figure 12)
I
I
I
DS
SD
SD
SD
175
= 25V, V
= 49A
= 49A, dI
= 49A, dI
TEST CONDITIONS
TEST CONDITIONS
GS
SD
SD
10
/dt = 100A/ s
/dt = 100A/ s
-2
= 0V,
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
60
50
40
30
20
10
0
25
CASE TEMPERATURE
50
10
-1
T
C
, CASE TEMPERATURE (
75
NOTES:
DUTY FACTOR: D = t
PEAK T
HUF75329G3, HUF75329P3, HUF75329S3S Rev. B
MIN
-
-
-
MIN
-
-
-
J
= P
100
DM
TYP
10
1060
TYP
-
-
-
405
0
x Z
95
P
DM
125
JC
1
/t
x R
2
o
MAX
t
1.25
C)
120
1
MAX
72
t
2
JC
-
-
-
150
+ T
C
UNITS
UNITS
10
nC
pF
pF
pF
ns
V
1
175