HUF75329G3 Fairchild Semiconductor, HUF75329G3 Datasheet - Page 9

• Manufacturer Part Number: HUF75329G3
• Description: MOSFET N-CH 55V 49A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF75329G3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 24 mOhm @ 49A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 49A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 75nC @ 20V
• Input Capacitance (ciss) @ Vds: 1060pF @ 25V
• Power - Max: 128W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SPICE Thermal Model
REV 23 February 1999
HUF75329P
CTHERM1 th 6 2.80e-3
CTHERM2 6 5 1.00e-2
CTHERM3 5 4 6.80e-3
CTHERM4 4 3 7.00e-3
CTHERM5 3 2 2.2e-2
CTHERM6 2 tl 5.1e-2
RTHERM1 th 6 7.94e-3
RTHERM2 6 5 1.98e-2
RTHERM3 5 4 5.57e-2
RTHERM4 4 3 3.13e-1
RTHERM5 3 2 4.61e-1
RTHERM6 2 tl 7.26e-2
SABER Thermal Model
SABER thermal model HUF75329P
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 2.80e-3
ctherm.ctherm2 6 5 = 1.00e-2
ctherm.ctherm3 5 4 = 6.80e-3
ctherm.ctherm4 4 3 = 7.00e-3
ctherm.ctherm5 3 2 = 2.2e-2
ctherm.ctherm6 2 tl = 5.1e-2
rtherm.rtherm1 th 6 = 7.94e-3
rtherm.rtherm2 6 5 = 1.98e-2
rtherm.rtherm3 5 4 = 5.57e-2
rtherm.rtherm4 4 3 = 3.13e-1
rtherm.rtherm5 3 2 = 4.61e-1
rtherm.rtherm6 2 tl = 7.26e-2
}
©2001 Fairchild Semiconductor Corporation
RTHERM5
RTHERM2
RTHERM1
RTHERM3
RTHERM4
RTHERM6
th
5
4
3
2
tl
6
JUNCTION
CASE
HUF75329G3, HUF75329P3, HUF75329S3S Rev. B
CTHERM5
CTHERM2
CTHERM1
CTHERM3
CTHERM6
CTHERM4