HUF75329G3 Fairchild Semiconductor, HUF75329G3 Datasheet - Page 5

• Manufacturer Part Number: HUF75329G3
• Description: MOSFET N-CH 55V 49A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF75329G3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 24 mOhm @ 49A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 49A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 75nC @ 20V
• Input Capacitance (ciss) @ Vds: 1060pF @ 25V
• Power - Max: 128W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
2.5
2.0
1.5
1.0
0.5
1.2
1.1
1.0
0.9
0.8
-80
-80
I
D
V
80 s PULSE TEST
GS
= 250 A
RESISTANCE vs JUNCTION TEMPERATURE
VOLTAGE vs JUNCTION TEMPERATURE
= 10V, I
-40
-40
T
T
J
J
, JUNCTION TEMPERATURE (
D
, JUNCTION TEMPERATURE (
= 49A
0
0
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
40
40
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
80
80
10
8
6
4
2
0
0
(Continued)
120
120
o
o
C)
C)
5
160
160
10
200
200
Q
g
V
, GATE CHARGE (nC)
DD
15
= 30V
20
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
1500
1200
WAVEFORMS IN
DESCENDING ORDER:
1800
900
600
300
0
1.2
1.0
0.8
0.6
0.4
I
I
I
I
D
D
D
D
0
25
= 49A
= 36.75A
= 24.5A
= 12.25A
-80
JUNCTION TEMPERATURE
30
-40
10
V
DS
T
J
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
35
0
20
HUF75329G3, HUF75329P3, HUF75329S3S Rev. B
C
C
C
ISS
OSS
RSS
40
30
80
V
GS
40
V
C
C
C
= V
GS
ISS
RSS
OSS
120
DS
= 0V, f = 1MHz
= C
o
= C
, I
C)
D
C
GS
GD
DS
50
= 250 A
160
+ C
+ C
GD
GD
200
60