HUF75329G3 Fairchild Semiconductor, HUF75329G3 Datasheet - Page 4

MOSFET N-CH 55V 49A TO-247

HUF75329G3

Manufacturer Part Number
HUF75329G3
Description
MOSFET N-CH 55V 49A TO-247
Manufacturer
Fairchild Semiconductor
Series
UltraFET™r
Datasheet

Specifications of HUF75329G3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
24 mOhm @ 49A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
49A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
75nC @ 20V
Input Capacitance (ciss) @ Vds
1060pF @ 25V
Power - Max
128W
Mounting Type
Through Hole
Package / Case
TO-247-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
100
500
100
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
80
60
40
20
10
0
1
0
1000
1
FIGURE 7. SATURATION CHARACTERISTICS
100
10
V
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DSS(MAX)
10
-5
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
V
1
DS
DS
= 55V
, DRAIN TO SOURCE VOLTAGE (V)
V
, DRAIN TO SOURCE VOLTAGE (V)
GS
DS(ON)
= 10V
2
10
10
-4
PULSE DURATION = 80 s
3
V
V
V
V
GS
GS
GS
GS
(Continued)
T
T
J
T
C
= 20V
= 10V
= 8V
= 7V
C
= MAX RATED
= 25
FIGURE 4. PEAK CURRENT CAPABILITY
= 25
100 s
1ms
10ms
4
10
o
o
V
V
C
100
C
-3
GS
GS
= 6V
= 5V
200
5
t, PULSE WIDTH (s)
10
-2
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
100
500
100
80
60
40
20
10
0.001
0
0
PULSE TEST
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
If R = 0
t
If R
t
FIGURE 8. TRANSFER CHARACTERISTICS
AV
AV
STARTING T
= (L)(I
= (L/R)ln[(I
T
0
C
10
1.5
= 25
V
AS
-1
GS
0.01
)/(1.3*RATED BV
t
o
, GATE TO SOURCE VOLTAGE (V)
AV
C
AS
J
, TIME IN AVALANCHE (ms)
*R)/(1.3*RATED BV
= 150
HUF75329G3, HUF75329P3, HUF75329S3S Rev. B
3.0
25
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
o
I = I
C
o
C
0.1
25
DSS
STARTING T
10
o
0
4.5
- V
C DERATE PEAK
DSS
175 - T
DD
150
)
- V
J
C
DD
1
-55
= 25
6.0
) +1]
o
V
C
o
DD
C
175
= 15V
10
o
1
C
7.5
10

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