SI5858DU-T1-E3 Vishay, SI5858DU-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI5858DU-T1-E3
• Description: MOSFET N-CH 20V 6A PPAK CHIPFET
• Manufacturer: Vishay

Specifications of SI5858DU-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 8V
• Input Capacitance (ciss) @ Vds: 520pF @ 10V
• Power - Max: 8.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® ChipFet Dual
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.039 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 7.2 A
• Power Dissipation: 2.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5858DU-T1-E3TR

Notes
a.
b.
c.
d.
e.
f.
g.
www.vishay.com
2
Si5858DU
Vishay Siliconix
Maximum Junction-to-Ambient (MOSFET)
Maximum Junction-to-Case (Drain) (MOSFET)
Maximum Junction-to-Ambient (Schottky)
Maximum Junction-to-Case (Drain) (Schottky)
Static
Drain-Source Breakdown Voltage
V
V
Gate–Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
DS
GS(th)
Package limited.
Surface Mounted on FR4 Board.
t v 5 sec.
See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Maximum under Steady State conditions for MOSFETS is 105 _C/W.
Maximum under Steady state conditions for Schottky is 110 _C/W.
Temperature Coefficient
Temperature Coefficient
b
Parameter
a
Parameter
a
a
b, f
_
DV
Symbol
DV
V
r
GS(th)/TJ
I
DS(on)
DS(on)
t
t
t
t
I
I
I
C
V
GS(th)
C
D(on)
C
Q
Q
d(on)
d(off)
d(on)
d(off)
GSS
DSS
DSS
Q
Q
g
R
DS/TJ
DS
oss
t
t
t
iss
rss
fs
gs
gd
r
r
f
g
g
New Product
V
V
I
V
V
D
I
V
DS
DS
D
DS
DS
DS
^ 3.6 A, V
^ 3.6 A, V
V
= 10 V, V
= 10 V, V
= 20 V, V
V
V
= 10 V, V
V
DS
V
V
V
V
V
V
V
V
V
10 V, V
DS
DS
Test Condition
GS
GS
DD
DD
DD
DD
GS
GS
DS
DS
= 0 V, V
v 5 V, V
= V
= 10 V, R
= 10 V, R
= 10 V, R
= 10 V, R
= 2.5 V, I
= 1.8 V, I
= 0 V, I
= 20 V, V
= 4.5 V, I
Symbol
= 10 V, I
I
I
f = 1 MHz
D
D
GEN
R
R
R
R
GS
GS
GS
GEN
GS
= 250 mA
= 250 mA
GS
GS
thJC
thJC
thJA
thJA
, I
GS
= 4.5 V, I
= 0 V, T
D
= 4.5 V, R
= 0 V, f = 1 MHz
D
= 8 V, I
GS
= 8 V, R
D
4.5 V, I
D
D
D
= 250 mA
L
L
L
L
GS
= 250 mA
= "8 V
= 4.4 A
= 4.4 A
= 4.1 A
= 1.8 A
= 2.8 W
= 2.8 W
= 2.8 W
= 2.8 W
= 4.5 V
= 0 V
D
J
D
D
g
= 55_C
= 4.4 A
g
= 4.4 A
= 1 W
= 1 W
4.4 A
Typical
45
12
49
13
Min
–20
0.4
20
Maximum
0.0455
55
15
61
16
0.032
0.037
Typ
17.4
–2.6
10.5
0.91
520
100
0.7
1.9
22
60
20
65
40
10
12
26
6
5
8
S–51931—Rev. A, 12-Sep-05
Document Number: 73460
"100
Max
0.039
0.045
0.055
–10
100
1.0
–1
16
30
60
15
10
20
40
15
9
Unit
_C/W
_C/W
_C/W
_C/W
mV/_C
mV/_C
Unit
mA
mA
pF
p
nC
nC
ns
ns
ns
V
V
A
W
S
W