SI5858DU-T1-E3 Vishay, SI5858DU-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI5858DU-T1-E3
• Description: MOSFET N-CH 20V 6A PPAK CHIPFET
• Manufacturer: Vishay

Specifications of SI5858DU-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 8V
• Input Capacitance (ciss) @ Vds: 520pF @ 10V
• Power - Max: 8.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® ChipFet Dual
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.039 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 7.2 A
• Power Dissipation: 2.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5858DU-T1-E3TR

Notes
a.
b.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Document Number: 73460
S–51931—Rev. A, 12-Sep-05
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Forward Voltage Drop
Forward Voltage Drop
Maximum Reverse Leakage Current
Maximum Reverse Leakage Current
Junction Capacitance
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
Parameter
Parameter
_
Symbol
Symbol
V
I
Q
I
I
C
V
V
SM
I
t
t
t
rm
rm
SD
S
rr
a
b
F
F
rr
T
_
New Product
I
I
F
F
= –2 A di/dt = 100 A/ms T
= –2 A, di/dt = 100 A/ms, T
V
I
V
Test Condition
Test Condition
I
S
F
r
r
= 20 V, T
= 1.2 A, V
= 1 A, T
= 20 V, T
T
V
V
C
I
F
r
r
= 25 _C
= 20 V
= 10 V
= 1 A
J
J
J
= 125_C
GS
= 125_C
= 85_C
= 0 V
J
J
= 25 _C
= 25 _C
Min
Min
Vishay Siliconix
0.255
Typ
Typ
0.34
0.05
0.8
45
21
29
16
10
90
2
Si5858DU
Max
Max
0.375
0.290
0.500
14.8
100
1.2
20
70
32
20
www.vishay.com
Unit
Unit
mA
mA
nC
pF
ns
ns
ns
A
A
V
V
V
3