SI5858DU-T1-E3 Vishay, SI5858DU-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI5858DU-T1-E3
• Description: MOSFET N-CH 20V 6A PPAK CHIPFET
• Manufacturer: Vishay

Specifications of SI5858DU-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 8V
• Input Capacitance (ciss) @ Vds: 520pF @ 10V
• Power - Max: 8.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® ChipFet Dual
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.039 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 7.2 A
• Power Dissipation: 2.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5858DU-T1-E3TR

Document Number: 73460
S–51931—Rev. A, 12-Sep-05
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
20
10
1
0.0
–50
–25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
– Source-to-Drain Voltage (V)
T
0.4
Threshold Voltage
J
– Temperature (_C)
25
0.6
50
T
J
= 150_C
I
D
75
= 250 mA
0.8
0.01
T
100
100
0.1
J
10
= 25_C
1
0.1
1.0
I
D(on)
_
125
Safe Operating Area, Junction-to-Ambient
*V
GS
*Limited by r
limited
u minimum V
1.2
150
V
New Product
DS
– Drain-to-Source Voltage (V)
DS(on)
Single Pulse
1
T
A
BVDSS limited
= 25_C
GS
at which r
I
DM
limited
DS(on)
10
0.08
0.07
0.06
0.05
0.04
0.03
is specified
40
30
20
10
0
0.001
1 s
10 s
0
100 ms
100 ms
10 ms
dc
1 ms
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.01
100
1
V
25_C
GS
– Gate-to-Source Voltage (V)
0.1
2
Time (sec)
Vishay Siliconix
1
125_C
3
Si5858DU
10
I
www.vishay.com
D
= 4.4 A
4
100
600
5
5