SI5858DU-T1-E3 Vishay, SI5858DU-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI5858DU-T1-E3
• Description: MOSFET N-CH 20V 6A PPAK CHIPFET
• Manufacturer: Vishay

Specifications of SI5858DU-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 8V
• Input Capacitance (ciss) @ Vds: 520pF @ 10V
• Power - Max: 8.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® ChipFet Dual
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.039 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 7.2 A
• Power Dissipation: 2.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5858DU-T1-E3TR

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4
Si5858DU
Vishay Siliconix
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
20
16
12
On-Resistance vs. Drain Current and Gate Voltage
8
4
0
8
6
4
2
0
0.0
0
0
I
D
0.5
= 4.4 A
V
4
DS
3
Q
Output Characteristics
g
V
– Drain-to-Source Voltage (V)
DS
I
1.0
D
– Total Gate Charge (nC)
– Drain Current (A)
= 10 V
V
Gate Charge
V
V
GS
8
GS
GS
V
= 2 V
DS
= 3 V thru 5 V
= 2.5 V
1.5
6
= 16 V
12
2.0
V
GS
V
= 4.5 V
V
9
V
GS
V
GS
GS
GS
16
2.5
= 1.8 V
= 2.5 V
= 1.5 V
_
= 1 V
3.0
20
12
New Product
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0
–50
0.0
0
On-Resistance vs. Junction Temperature
C
rss
–25
V
I
D
GS
= 4.4 A
0.3
V
V
4
= 4.5 V
DS
GS
T
Transfer Characteristics
J
0
– Junction Temperature (_C)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
25
Capacitance
0.6
8
C
T
25_C
C
50
oss
C
iss
S–51931—Rev. A, 12-Sep-05
= 125_C
Document Number: 73460
0.9
12
75
100
1.2
16
–55_C
125
150
1.5
20