BSN304,126 NXP Semiconductors, BSN304,126 Datasheet

MOSFET N-CH 300V 300MA SOT54

BSN304,126

Manufacturer Part Number
BSN304,126
Description
MOSFET N-CH 300V 300MA SOT54
Manufacturer
NXP Semiconductors
Datasheet
1.BSN304126.pdf (12 pages)

Specifications of BSN304,126

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 Ohm @ 250mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
300mA
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
120pF @ 25V
Power - Max
1W
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Other names
934023530126
BSN304 AMO
BSN304 AMO
Product specification
Supersedes data of 1997 Jun 17
DATA SHEET
BSN304
N-channel enhancement mode
vertical D-MOS transistor
age
M3D106
DISCRETE SEMICONDUCTORS
2001 Dec 11

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BSN304,126 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET age M3D106 BSN304 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 17 2001 Dec 11 ...

Page 2

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. APPLICATIONS Line current interruptor in telephone sets Relay, high-speed and line transformer drivers. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor ...

Page 3

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient; note 1 th j-a Note 1. Device mounted on an epoxy printed-circuit board, maximum lead length 4 mm; mounting pad for the ...

Page 4

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor handbook, halfpage Fig.2 Switching times test circuit. 1.2 handbook, halfpage P tot (W) 0.8 0 100 Fig.4 Power derating curve. 2001 Dec 11 handbook, ...

Page 5

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor 1.2 handbook, halfpage (A) 3.5 V 0.8 0 Fig.6 Typical output characteristics. 30 ...

Page 6

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor 3 10 handbook, full pagewidth Z th j-a (K/ 0.5 0.2 0.1 10 0.05 0.02 0. Fig.10 Transient thermal resistance from ...

Page 7

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor 2 handbook, halfpage k 1 -------------------------------------------- - . = Typical R ; DSon ...

Page 8

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor PACKAGE OUTLINES Plastic single-ended leaded (through hole) package; 3 leads (on-circle DIMENSIONS (mm are the original dimensions) UNIT 5.2 ...

Page 9

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor DATA SHEET STATUS PRODUCT (1) DATA SHEET STATUS STATUS Objective data Development Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing ...

Page 10

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor 2001 Dec 11 NOTES 10 Product specification BSN304 ...

Page 11

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor 2001 Dec 11 NOTES 11 Product specification BSN304 ...

Page 12

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited ...

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