BSN304,126 NXP Semiconductors, BSN304,126 Datasheet - Page 3

• Manufacturer Part Number: BSN304,126
• Description: MOSFET N-CH 300V 300MA SOT54
• Manufacturer: NXP Semiconductors

Specifications of BSN304,126

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 250mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 120pF @ 25V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934023530126; BSN304 AMO; BSN304 AMO

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead
STATIC CHARACTERISTICS
T
2001 Dec 11
R
V
I
V
R
I
C
C
C
Switching times (see Figs 2 and 3)
t
t
j
GSS
DSS
on
off
(BR)DSS
GSth
Y
SYMBOL
th j-a
= 25 C unless otherwise specified.
SYMBOL
DSon
iss
oss
rss
N-channel enhancement mode
vertical D-MOS transistor
fs
minimum 10 mm x 10 mm.
thermal resistance from junction to ambient; note 1
drain-source breakdown voltage
gate-source leakage current
gate-source threshold voltage
drain-source on-state resistance
drain-source leakage current
transfer admittance
input capacitance
output capacitance
feedback capacitance
turn-on time
turn-off time
PARAMETER
PARAMETER
I
V
I
I
I
V
I
V
V
V
f = 1 MHz
I
V
I
V
D
D
D
D
D
D
D
GS
DS
DS
DS
DS
GS
GS
= 10 A; V
= 1 mA; V
= 250 mA; V
= 20 mA; V
= 250 mA; V
= 250 mA; V
= 250 mA; V
3
= 20 V; V
= 240 V; V
= 25 V; V
= 25 V; V
= 25 V; V
= 0 to 10 V
= 10 to 0 V
CONDITIONS
DS
GS
GS
GS
GS
GS
GS
GS
DS
DD
DD
DS
= V
= 0
= 2.4 V
= 0; f = 1 MHz
= 0; f = 1 MHz
= 0;
= 25 V
= 0
= 10 V
= 0
= 50 V;
= 50 V;
GS
300
0.8
200
MIN.
VALUE
125
3.7
4.8
690
100
21
10
6
46
Product specification
TYP. MAX. UNIT
BSN304
2
6
10
100
120
30
15
10
60
100 nA
UNIT
K/W
V
V
nA
mS
pF
pF
pF
ns
ns