BSN304,126 NXP Semiconductors, BSN304,126 Datasheet - Page 6

• Manufacturer Part Number: BSN304,126
• Description: MOSFET N-CH 300V 300MA SOT54
• Manufacturer: NXP Semiconductors

Specifications of BSN304,126

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 250mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 120pF @ 25V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934023530126; BSN304 AMO; BSN304 AMO

Philips Semiconductors
2001 Dec 11
handbook, halfpage
handbook, full pagewidth
N-channel enhancement mode
vertical D-MOS transistor
(1) R
Z th j-a
(K/W)
= 0.01; T
10
10
10
10
10
10
I D
(A)
10
10
DSon
1
10
1
2
3
1
3
2
1
1
5
P
amb
limitation.
0.05
= 25 C.
0.02
0.01
Fig.10 Transient thermal resistance from junction to ambient as a function of pulse time.
0.5
t p
0.2
0.1
=
0
(1)
T
Fig.11 SOAR curve.
10
10
=
4
t p
T
t
DC
10
10
3
2
V DS (V)
100 ms
1 s
100 s
1 ms
10 ms
10 s
t p =
MLD770
10
10
2
3
10
6
1
1
10
P
t p
10
T
2
Product specification
t p (s)
=
BSN304
MRC241
t p
T
t
10
3