BUK9528-100A,127 NXP Semiconductors, BUK9528-100A,127 Datasheet - Page 2

• Manufacturer Part Number: BUK9528-100A,127
• Description: MOSFET N-CH 100V 49A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9528-100A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 49A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 4293pF @ 25V
• Power - Max: 166W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934055883127; BUK9528-100A; BUK9528-100A

Philips Semiconductors
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
March 2000
TrenchMOS
Logic level FET
j
SYMBOL PARAMETER
V
V
I
I
R
mb
SYMBOL PARAMETER
C
C
C
t
t
t
t
L
L
L
L
j
SYMBOL PARAMETER
I
I
V
t
Q
= 25˚C unless otherwise specified
DSS
GSS
d on
r
d off
f
DR
DRM
rr
= 25˚C unless otherwise specified
d
d
d
s
(BR)DSS
GS(TO)
SD
DS(ON)
iss
oss
rss
rr
= 25˚C unless otherwise specified
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
Internal drain inductance
Internal source inductance
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
transistor
CONDITIONS
V
V
V
V
V
V
V
CONDITIONS
V
V
V
Measured from drain lead 6 mm
from package to centre of die
Measured from contact screw on
tab to centre of die(TO220AB)
Measured from upper edge of drain
tab to centre of die(SOT404)
Measured from source lead to
source bond pad
CONDITIONS
I
I
I
V
F
F
F
GS
DS
DS
GS
GS
GS
GS
GS
DD
GS
GS
= 25 A; V
= 49 A; V
= 49 A; -dI
= V
= 100 V; V
= 0 V; I
= 10 V; V
= 5 V; I
= 10 V; I
= 4.5 V; I
= 0 V; V
= 30 V; R
= 5 V; R
= -10 V; V
GS
; I
2
D
D
D
GS
GS
DS
G
D
F
= 0.25 mA;
= 1 mA
= 25 A
D
/dt = 100 A/ s;
load
= 10
= 0 V
= 0 V
= 25 A
R
GS
DS
= 25 V; f = 1 MHz
= 25 A
= 30 V
=1.2 ;
= 0 V;
= 0 V
T
T
T
T
T
j
j
j
j
j
= 175˚C
= 175˚C
= 175˚C
= -55˚C
= -55˚C
MIN.
MIN.
MIN.
100
0.5
89
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
TYP.
3220
TYP.
0.05
18.5
18.8
0.85
0.22
315
187
250
106
1.5
4.5
3.5
2.5
7.5
1.1
BUK9528-100A
BUK9628-100A
17
11
58
63
2
-
-
-
-
-
-
-
-
Product specification
MAX.
MAX.
MAX.
4293
500
100
378
256
350
148
195
2.0
2.3
1.2
10
28
70
27
31
16
87
49
-
-
-
-
-
-
-
-
-
-
Rev 1.000
UNIT
UNIT
UNIT
m
m
m
m
nH
nH
nH
nH
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
V
V
A
A
V
V
C
A
A