BUK9528-100A,127 NXP Semiconductors, BUK9528-100A,127 Datasheet - Page 3

• Manufacturer Part Number: BUK9528-100A,127
• Description: MOSFET N-CH 100V 49A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9528-100A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 49A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 4293pF @ 25V
• Power - Max: 166W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934055883127; BUK9528-100A; BUK9528-100A

Philips Semiconductors
AVALANCHE LIMITING VALUE
1 For maximum permissible repetive avalanche current see fig.18.
March 2000
TrenchMOS
Logic level FET
SYMBOL PARAMETER
W
DSS
ID% = 100 I
120
110
100
Fig.2. Normalised continuous drain current.
120
110
100
1
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
Fig.1. Normalised power dissipation.
0
0
PD%
ID%
Drain-source non-repetitive
unclamped inductive turn-off
energy
20
PD% = 100 P
20
D
/I
40
40
D 25 ˚C
transistor
60
60
= f(T
80
80
Tmb / C
Tmb / C
D
mb
/P
); conditions: V
Normalised Current Derating
D 25 ˚C
100
100
Normalised Power Derating
120
120
= f(T
140
140
mb
)
160
160
GS
CONDITIONS
I
V
D
180
180
GS
= 30 A; V
5 V
= 5 V; R
3
DD
GS
= 50 ; T
25 V;
ID/A
0.001
0.01
Zth/(K/W)
1000
0.1
I
100
D
1E-07
1
10
1
& I
Fig.3. Safe operating area. T
1
0.05
0.02
0.2
RDS(ON)=VDS/ID
0.1
Fig.4. Transient thermal impedance.
0.5
DM
0
mb
Z
= f(V
= 25 ˚C
th j-mb
1E-05
DS
= f(t); parameter D = t
); I
10
DM
DC
t/s
MIN.
single pulse; parameter t
-
1E-03
VSD/V
TYP.
BUK9528-100A
BUK9628-100A
-
Product specification
100
1E-01
mb
100ms
100us
10ms
10us
1us
tp =
1ms
MAX.
= 25 ˚C
p
/T
45
Rev 1.000
1E+01
UNIT
1000
mJ
p