BUK9528-100A,127 NXP Semiconductors, BUK9528-100A,127 Datasheet - Page 6
![MOSFET N-CH 100V 49A SOT78](/photos/5/30/53046/568-to-220ab-3_sot78_sml.jpg)
BUK9528-100A,127
Manufacturer Part Number
BUK9528-100A,127
Description
MOSFET N-CH 100V 49A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK9628-100A118.pdf
(9 pages)
Specifications of BUK9528-100A,127
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
27 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
49A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
4293pF @ 25V
Power - Max
166W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Other names
934055883127
BUK9528-100A
BUK9528-100A
BUK9528-100A
BUK9528-100A
Philips Semiconductors
March 2000
TrenchMOS
Logic level FET
current(I
Fig.18. Maximum permissible repetitive avalanche
VGS
0
100
I
AV
10
1
0.001
Fig.17. Avalanche energy test circuit.
AV
Tj prior to avanche 150ºC
W
) versus avalanche time(t
DSS
RGS
0.01
0.5 LI
Avalanche Time, t
inductive loads.
transistor
D
2
0.1
BV
DSS
AV
L
(ms)
VDS
BV
T.U.T.
DSS
1
25ºC
AV
) for unclamped
shunt
R 01
V
DD
-
+
10
-ID/100
VDD
6
VGS
0
Fig.19. Switching test circuit.
RG
RD
VDS
T.U.T.
BUK9528-100A
BUK9628-100A
Product specification
-
+
Rev 1.000
VDD