PSMN004-55W,127 NXP Semiconductors, PSMN004-55W,127 Datasheet - Page 6

• Manufacturer Part Number: PSMN004-55W,127
• Description: MOSFET N-CH 55V 100A SOT429
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN004-55W,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 226nC @ 5V
• Input Capacitance (ciss) @ Vds: 13000pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055815127; PSMN004-55W; PSMN004-55W

Philips Semiconductors
October 1999
N-channel logic level TrenchMOS
Fig.13. Typical turn-on gate-charge characteristics.
15
14
13
12
11
10
100
9
8
7
6
5
4
3
2
1
0
90
80
70
60
50
40
30
20
10
I
0
F
0
Gate-source voltage, VGS (V)
= f(V
0
ID = 100 A
Source-Drain Diode Current, IF (A)
Tj = 25 C
VGS = 0 V
Fig.14. Typical reverse diode current.
40
0.1
SDS
0.2
80
); conditions: V
0.3
120
Source-Drain Voltage, VSDS (V)
0.4
160
Gate charge, QG (nC)
V
GS
175 C
0.5
200
= f(Q
VDD = 11 V
0.6
240
GS
G
0.7
= 0 V; parameter T
)
280
0.8
Tj = 25 C
VDD = 44 V
320
0.9
360
1
400
1.1
440
1.2
j
transistor
6
avalanche current (I
1000
100
10
Fig.15. Maximum permissible non-repetitive
1
0.001
Maximum Avalanche Current, I
unclamped inductive load
0.01
Tj prior to avalanche = 150 C
Avalanche time, t
AS
) versus avalanche time (t
0.1
AS
(A)
AV
PSMN004-55W
(ms)
Product specification
1
25 C
Rev 1.100
10
AV
);